Samsung has accepted TSMC’s manufacturing process for the base die in Nvidia’s customized NVHBM memory, according to industry reporting. Nvidia requested a common process across its memory suppliers to make their products behave consistently and reduce separate validation work. Samsung continues using its own foundry for standard memory products, making the reported arrangement specific to this customer’s design.
Samsung has accepted a request to use TSMC’s process for the base die in Nvidia’s custom NVHBM memory, according to Seoul Economic Daily’s original industry reporting. The base die contains logic connecting stacked memory with the wider computing system. Samsung previously made both the memory and base components through its own processes. The reported acceptance follows an internal review of Nvidia’s technical request.[1]
For these base dies, Nvidia’s request to all three suppliers — Samsung, SK Hynix and Micron — specifies TSMC’s 3-nanometer manufacturing process. It also requested the 1c dynamic random-access memory process for the core memory dies. The stated aim is consistent behavior across suppliers and less work validating each product separately. NVHBM is a customized design based on high-bandwidth memory, or HBM, with HBM4E providing its foundation; Nvidia announced the design in August.[1]
Standard HBM4 and HBM4E products retain Samsung’s own 4-nanometer base-die process, the publication says. Its account also describes Samsung manufacturing customized memory for other customers, including AMD, and checking whether its own foundry can make NVHBM base dies. Samsung and TSMC previously worked on packaging compatibility four years ago. That earlier cooperation concerned connecting memory to a graphics processor; the newly reported arrangement reaches the manufacture of the memory component itself.[1]
